E.O. Lawrence Berkeley National Laboratory
APPLICATION OF TECHNOLOGY:
- Silicon doping in semiconductor manufacturing
- Generates beam free of unwanted impurities
Berkeley National Laboratory's new selective ion source produces a beam of boron, arsenic or phosphorus ions from plasma that is essentially free of unwanted hydrogen ions. In addition, the absence of ionic impurities such as CO+, CO2+, and H2O+ from the beam eliminates the need to use cumbersome mass spectrometers. This ion source is particularly applicable to the positive doping of silicon in the manufacture of semiconductors and semiconductor devices.
STATUS: U.S. Patent #5,517,084 and another patent pending. Available for licensing in specific fields of use
REFERENCE NUMBER: IB-993