Electronic Materials

Eugene E. Haller, Program Leader

The goal of the Electronic Materials Program is to advance the fundamental understanding of the materials science of semiconductors.  The research focuses on the relationships between synthesis and processing conditions and the structure, properties, and stability of semiconductor materials systems.  Progress in these areas is essential for the performance and reliability of a number of technologies that lie at the heart of the DOE mission including ultrahigh efficiency photovoltaic energy conversion devices, high efficiency solid-state sources of visible light, visual displays, and of a large variety of sensors and power control systems for energy generation, conservation, distribution and use.  The following are the areas of current emphasis:

Electronic Materials   (funded by DOE-BES-MS&EP)

  • Solar cell materials:  group III-nitrides and highly mismatched semiconductor alloys
    P.I.s: J. W. Ager, O. D. Dubon , E. E. Haller, Z. Liliental-Weber, W. Walukiewicz, K. M. Yu–Characterization and modeling of InN and GaN and their alloys
    –Application of InGaN alloys to high efficiency, multilayer tandem solar cells
    –Application of InGaN/oxide layered thin films to corrosion-resistant photoelectrochemical cells for water-splitting
    –Ultrahigh-efficiency intermediate band solar cells
  • Non-equilibrium growth of epitaxial films and nanostructures
    P.I.s: J. W. Ager, D. C. Chrzan, E. E. Haller, Z. Liliental-Weber, K. M. Yu
    –Preparation and characterization of group IV alloy nanocrystals by ion implantation
    –Determination of the kinetics of alloy order/disorder transitions and equilibrium in silica embedded  nanocrystals
  • Isotopically controlled semiconductor structures
    P.I.s: J. W. Ager, E. E. Haller
    –Preparation of 28Si, 29Si, 30Si and other semiconductor forming elements of increasing isotopic purity and the electronic, vibrational, and spin spectroscopic studies of them
  • Semiconductor spintronics
    P.I.: O. D. Dubon
    –Ferromagnetism in GeMn and in Ga1-x MnxAs films
    –Spatially resolved hydrogen passivation of Mn in Ga1-x MnxAs
    –Synthesis and characterization of quaternary alloy Ga1-sMnxPyAs1-y  
    –Synthesis of wafer-scale graphene from physical vapor processes

Non-DOE Funded Projects

  • Development of Low Defect Density GaN and AlGaN for HBTs  (Z. Liliental-Weber, funded by Georgia Inst Tech)
  • Cryogenic NTD-Ge Thermistor Research for CUORE (Cryogenic Underground Observatory for Rare Events) (J. W. Beeman and E. E. Haller, funded by NSD-LBNL and University of Milan)
  • Cryogenic Thermistor Development for the Edelweiss-II Experiment (J. W. Beeman and E. E. Haller, funded by French Atomic Energy Commission)
  • Multiband Semiconductor Solar Cells   (K. M. Yu, funded by Rose Street Laboratory)
    High Efficiency III-Nitride Tandem Cells   (J. W. Ager, funded by Rose Street Laboratory)
  • Development of Large-format, Monolithic Far-Infrared Detector Arrays (J. W. Beeman and E. E. Haller, funded by Technoscience)