Quentin Ramasse
LBNL
Staff Scientist
qmramasse@lbl.gov
phone: 510-486-4721
Education
M.Eng. Engineering Ecole
Centrale Paris, France
M.Sc. Mathematics/Theoretical Physics University
of Cambridge
Ph.D. Electron Microscopy (aberration correction) University
of Cambridge
Postdoctoral Fellow National Center for
Electron Microscopy
Awards
Prix Hoschet 1999 and 2000, Ecole Centrale Paris
Lauréat de la Fondation Georges Besse, 2000
General Research Interests
Quentin Ramasse’s research interests comprise both methodological
and practical aspects of aberration corrected scanning transmission
electron microscopy (STEM). He focuses on the development of
advanced operation and analysis techniques through imaging and
wave-optical theory, and developed for instance an aberration
diagnosis method for purely crystalline samples. His instrumentation
development activities are also complemented with materials science
applications of aberration-corrected STEM, most recently in the
domain of alternative energy sources.
MSD Research Projects:
National Center for Electron Microscopy
Personal website: http://ncem.lbl.gov/frames/staff.htm#Ramasse
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Figure: Determining guest sites occupancy
in H-encapsulating clathrate compounds through HAADF STEM. High
resolution images of the silicon clathrate KxSi46 taken on
NCEM’s aberration corrected VG HB 501 dedicated STEM microscope
(top left) are compared to simulations to determine accurately
the guest sites occupancy. Such measurements can in turn
be directly correlated to the intake capabilities of these
cage-like structures with very promising H-storage capabilities
