IMAGE FROM THE BERKELEY LAB CCD
	A 600 sec. dark image at –140C of the high-voltage compatible CCD at Vsub = 166.8V shows full depletion of the 660 um thick device. Measured dark current/noise was 0.8 e-/pixel-hr and 4.1 e-. Click on image for a larger view.

APPLICATIONS OF TECHNOLOGY:

• Small pixel, scientific CCDs where good point spread function (PSF) is required
• High quantum efficiency direct detection of 20 kV x-rays
• Space-based imaging where reliability is of prime importance

ADVANTAGES:

• Can be operated dependably at high substrate bias voltages, enabling full depletion of substrates up to 660 µm thick in addition to good spatial resolution
• Demonstrates greater radiation hardness with respect to displacement damage than conventional n-channel CCDs

ABSTRACT:

Steve Holland of Berkeley Lab has invented a fully depleted charged-coupled device (CCD) that can operate reliably at high substrate bias voltages.  This capability enables the use of substrates thick enough for direct x-ray detection and for thinner substrates achieves point spread functions low enough to meet the requirements of small pixel scientific applications.  In addition, the Berkeley Lab CCD produces images with good spatial resolution without sacrificing the long-term reliability necessary for space applications.

Holland has produced images with good point spread function using a fully depleted CCD 660 µm thick.  An independent testing group at NASA has verified that the Berkeley Lab CCD has greater radiation hardness with respect to displacement damage than conventional n-channel CCDs.

STATUS:

• Issued Patent # 7,271,468. Available for licensing or collaborative research

REFERENCE NUMBER: IB-2028

SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:

• High Efficiency Micro-Scale Light-Concentrating Arrays for Digital Imaging, IB-2279
• High Quantum Efficiency Charge Coupled Device, IB-1204a
• Low Resistivity Photon-transparent Window Attached to Photosensitive Silicon Detector, IB-1204