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Microwave Source |
APPLICATIONS
OF TECHNOLOGY:
- Ion
implantation/doping
- 13
nm extreme ultraviolet radiation (EUV) lithography
ADVANTAGES:
- Simple
electron cyclotron resonance (ECR) source that promises
to be cost effective
- Compact
and efficient
- Promises
to provide intense 13 nm EUV radiation
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ABSTRACT:
Ka-Ngo
Leung and colleagues have developed an ECR ion source that
uses the same method of microwave
heating as conventional ECR sources but employs a simple permanent
magnet ring structure to produce a dipole field instead of
a more complex electromagnetic and permanent magnet structure.
This ECR source promises to be an efficient and cost-effective
system for providing multiply charged ions. When used to produce
Xe+10, it becomes a source of intense EUV radiation useful
for 13 nm lithography.
The Berkeley Lab system could also be configured to combine
the microwave source with an RF antenna in order to increase
density plasma in the chamber and therefore increase ion or
light intensity output. Another feature of the microwave source
is an additional magnetic coil to provide a pinch field around
the chamber for even greater light intensity and plasma density.
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STATUS:
- U.S. Patent
#6,922,019
- available for licensing or collaborative research
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REFERENCE
NUMBER: IB-1562
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SEE
THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:
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