Microwave Source

APPLICATIONS OF TECHNOLOGY:

• Ion implantation/doping
• 13 nm extreme ultraviolet radiation (EUV) lithography

ADVANTAGES:

• Simple electron cyclotron resonance (ECR) source that promises to be cost effective
• Compact and efficient
• Promises to provide intense 13 nm EUV radiation

ABSTRACT:

Ka-Ngo Leung and colleagues have developed an ECR ion source that uses the same method of microwave heating as conventional ECR sources but employs a simple permanent magnet ring structure to produce a dipole field instead of a more complex electromagnetic and permanent magnet structure. This ECR source promises to be an efficient and cost-effective system for providing multiply charged ions. When used to produce Xe⁺¹⁰, it becomes a source of intense EUV radiation useful for 13 nm lithography.

The Berkeley Lab system could also be configured to combine the microwave source with an RF antenna in order to increase density plasma in the chamber and therefore increase ion or light intensity output. Another feature of the microwave source is an additional magnetic coil to provide a pinch field around the chamber for even greater light intensity and plasma density.

STATUS:

• U.S. Patent #6,922,019
• available for licensing or collaborative research

REFERENCE NUMBER: IB-1562

SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:

• High Current Focused Ion Beam System (IB-1217)
• High Throughput Proximity Print System for Lithography (IB-1529, IB-1780)
• Ion Beam Projection Lithography (IPL) for Minimizing Pattern Distortion and Mask Replacement/Repair(IB-1383)
• Universal Pattern Generator for Micro-Ion Beam Reduction Lithography (IB-1387, IB-1579)