E.O. Lawrence Berkeley National Laboratory
APPLICATION OF TECHNOLOGY:
- Ion projection lithography
- Radioactive Ion beam production
- Low energy ion beam deposition processing
- Low energy mass spectroscopy
- Surface deposition processes
ADVANTAGES:
- Fewer chromatic aberrations in lithography applications
- Allows isobaric separation in radioactive ion beam production
- Better separation and focusing of ion beams in deposition applications
ABSTRACT:
Ka-Ngo Leung and Yvette Lee of Berkeley Lab have devised an ion source that provides low longitudinal (axial) energy spread. The energy spread from this multicusp source has been measured to be 0.6 eV. Berkeley Lab's new source will find applications in ion projection lithography (IPL) aimed at projecting sub 0.1 micron patterns from a stencil mask onto a wafer substrate; radioactive ion beam production for physics experiments, low energy (<100 eV) ion beam deposition processes, and in achieving good mass resolution in low energy (<500 eV) mass spectrometers for analyzing nuclear and chemical waste.
STATUS: U.S. Patent #6,094,012. Available for licensing in specific fields of use
REFERENCE NUMBER: IB-1165
